Main Article Content
In discrete electronics, the statistical variability of device parameters is seldom given in datasheets, at least in such a way that this information can still be useful at design phase. Furthermore, even though several device manufacturers provide simulation models for simulation tools, the device-to-device and lot-to-lot variability of specific parameters is not included in such characterizations, and statistical simulation data is rarely provided, which calls into question the effectiveness of such models. The goal of the present work is twofold. First, it aims to provide a simple but reasonably accurate fitting approach with physical meaning to the static IV curves of long-channel MOSFET transistors. Secondly, it also finds pedagogical purposes, having practical applicability in undergraduate courses of fundamental electronics, as it targets the use of a straightforward approach to derive parameters useful for hand calculations in lab experiments based on experimental data with statistical support.
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